Analysis of solid state relay solutions based on different semiconductor technologies

Fernández, Manuel ; Perpiñà, Xavier ; Vellvehi, Miquel ; Jordà, Xavier ; Cabeza, Tomás ; Llorente, Sergio

Resumen: This paper provides an analysis on the design, implementation and operation of Bi-Directional Switches (BDS) based on power semiconductor devices intended to replace Electro Mechanical Relays (EMR) in home appliances. Static and dynamic characterizations of test vehicles developed using different power device semiconductor technologies (TRIAC, Super Junction (SJ) MOSFET, IGBT...) are presented. At this time, emerging Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) seem to be very suitable for the mentioned applications. Actually, GaN HEMTs based BDS has demonstrated to be the best solution to replace EMRs, with a high expectation to a significant cost reduction.

Idioma: Inglés

DOI: 10.23919/EPE17ECCEEurope.2017.8099012

Año: 2017

Publicado en: European Conference on Power Electronics and Applications. 17363408 (2017), [9 pp.]
ISSN: 2325-0313

Financiación: info:eu-repo/grantAgreement/ES/MINECO/PCIN-2014-057
Financiación: info:eu-repo/grantAgreement/ES/MINECO/RYC-2010-07434
Financiación: info:eu-repo/grantAgreement/ES/MINECO/TEC2014-51903-R

Tipo y forma: Congress (Published version)