Structural quality in single crystalline CdSe ingots grown by PVT

D' Elia, R.L. ; Aguirre, M.H. (Universidad de Zaragoza) ; Di Stefano, M.C. ; Heredia, E.A. ; Martinez, A.M. ; Canepa, H.R. ; Garcia, J.L.M.N. ; Trigubo, A.B.

Resumen: CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a high stopping power for nuclear radiation. Single crystalline CdSe ingots were grown by Physical Vapor Transport (PVT) employing a horizontal reactor. As devices critically depend on material properties its single crystal-line quality was determined by chemical etching and transmission electron microscopy. Results were compared to those corresponding to Bridgman High Pressure (HPB) grown material and also to PVT material grown in a vertical reactor.

Idioma: Inglés

DOI: 10.1590/S1517-707620200001.0911

Año: 2020

Publicado en: MATERIA-RIO DE JANEIRO 25, 1 (2020), [10 pp]
ISSN: 1517-7076

Factor impacto JCR: 0.312 (2020)

Categ. JCR: MATERIALS SCIENCE, MULTIDISCIPLINARY rank: 330 / 333 = 0.991 (2020) - Q4 - T3

Factor impacto SCIMAGO: 0.168 - Chemistry (miscellaneous) (Q4) - Physics and Astronomy (miscellaneous) (Q4) - Materials Science (miscellaneous) (Q4)

Tipo y forma: Artículo (Versión definitiva)

Área (Departamento): Área Física Materia Condensada (Dpto. Física Materia Condensa.)