First self-resonant frequency of power inductors based on approximated corrected stray capacitances

Lope, I. (Universidad de Zaragoza) ; Carretero, C. (Universidad de Zaragoza) ; Acero, J. (Universidad de Zaragoza)

Resumen: Inductive devices are extensively employed in power electronic systems due to their magnetic energy storage and power transfer capabilities. The current trend is towards increasing the frequency of operation in order to reduce the size of the magnetic components, but the main drawback is that the parasitic capacitance effect can become significant, and degrade the performance of the system. This work analyses the influence of this stray capacitance, and considers how to improve the performance of the device. In general, the impact of the stray capacitance on a magnetic component can be reduced by two methods: reducing the parasitic capacitance between turns of the winding or, alternatively, modifying the arrangement of the connection between turns. To evaluate the last option, an approximated expression of the first self-resonant frequency of the magnetic device is proposed. This gives a rapid assessment of the performance of different devices maintaining the overall equivalent inductance. The proposed expression accounts for the influence of the connection between turns in the bandwidth of the component. Finally, some numerical results are verified with planar coils manufactured on two-layer printed circuit boards.

Idioma: Inglés

DOI: 10.1049/pel2.12030

Año: 2020

Publicado en: IET Power Electronics 14, 2 (2020), 257-267
ISSN: 1755-4535

Factor impacto JCR: 2.641 (2020)

Categ. JCR: ENGINEERING, ELECTRICAL & ELECTRONIC rank: 126 / 273 = 0.462 (2020) - Q2 - T2

Factor impacto SCIMAGO: 0.637 - Electrical and Electronic Engineering (Q2)

Financiación: info:eu-repo/grantAgreement/ES/DGA/FSE
Financiación: info:eu-repo/grantAgreement/ES/MICINN-AEI/RTC-2017-5965-6
Financiación: info:eu-repo/grantAgreement/ES/MICINN/PID2019-103939RB-I00

Tipo y forma: Article (Published version)

Área (Departamento): Área Física Aplicada (Dpto. Física Aplicada)
Área (Departamento): Área Tecnología Electrónica (Dpto. Ingeniería Electrón.Com.)
Área (Departamento): Área Electromagnetismo (Dpto. Física Aplicada)