Characterization of 65-nm CMOS Integrated Resistors in the Cryogenic Regime

Marqués-García, Jorge (Universidad de Zaragoza) ; Pérez-Bailón, Jorge ; Celma, Santiago (Universidad de Zaragoza) ; Sánchez-Azqueta, Carlos (Universidad de Zaragoza)

Resumen: This article presents the experimental characterization and modeling of CMOS resistors in a temperature range extending from room temperature (300 K) down to the deep cryogenic regime at 4 K. A set of poly-silicon resistors with different bulk structures and sizing have been fabricated in a 65 nm CMOS process and their I–V curves have been obtained experimentally in the 4 to 300 K range with a temperature step of only 0.5 K to obtain a large set of resistance values equally distributed along the temperature range. The plot of the resistance values against temperature has allowed us to obtain the temperature coefficient α(T )of the different resistors in the whole temperature range down to 4 K. Interestingly, for all the measured resistors the α(T )–T curves show a change in tendency for temperatures spanning from 66 to 98 K, this is, in the vicinity of the condensation temperature of nitrogen (77 K), where most of the thermal contraction of materials occurs

Idioma: Inglés

DOI: 10.1109/TIM.2024.3381286

Año: 2024

Publicado en: IEEE Transactions on Instrumentation and Measurement 73 (2024), 3 pp.
ISSN: 0018-9456

Financiación: info:eu-repo/grantAgreement/ES/AEI/PID2020-114110RA-I00

Tipo y forma: Artículo (Versión definitiva)

Área (Departamento): Área Física Aplicada (Dpto. Física Aplicada)
Área (Departamento): Proy. investigación HCA (Dpto. Física Teórica)
Área (Departamento): Área Electrónica (Dpto. Ingeniería Electrón.Com.)